Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4S560832C-TB1H Integrated Circuit, K4S560832C-TB1H SAMSUNG
DescriptionSamsung Semiconductor K4S560832C-TB1H Dram, Memory Density:268.4355 Mbit, Memory Width:8, Organization:32MX8, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Available from
Sourcing support available
Start a sourcing request