Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4S51323LC-MG1L Integrated Circuit, K4S51323LC-MG1L SAMSUNG
DescriptionSamsung Semiconductor K4S51323LC-MG1L Dram, Memory Density:536.8709 Mbit, Memory Width:32, Organization:16MX32, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
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