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K4S511632M-TC1LT

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Samsung K4S511632M-TC1LT

Samsung K4S511632M-TC1LT overview

Samsung Semiconductor K4S511632M-TC1LT Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies...

Manufactured bySamsung
Part number or familyK4S511632M-TC1LT
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4S511632M-TC1LT Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:8192

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