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K4S510832M-TL75

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Samsung K4S510832M-TL75

Samsung K4S510832M-TL75 overview

16M x 8bit x 4 Banks Synchronous DRAM LVTTL Samsung Semiconductor K4S510832M-TL75 Dram, Memory Density:536.8709 Mbit, Memory Width:8, Organization:64MX8, Supply...

Manufactured bySamsung
Part number or familyK4S510832M-TL75
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
Description16M x 8bit x 4 Banks Synchronous DRAM LVTTL
DescriptionSamsung Semiconductor K4S510832M-TL75 Dram, Memory Density:536.8709 Mbit, Memory Width:8, Organization:64MX8, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST

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