Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4S283233E-HN1L Integrated Circuit, SAMSUNG BGA
DescriptionSamsung Semiconductor K4S283233E-HN1L Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Power Supplies:3/3.3 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):105 MHz, Refresh Cycles:4096
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