Product details
Manufactured bySamsung
Product groupModules
DescriptionSdram Stacked 1gb B-die
DescriptionSamsung Semiconductor K4S1G0732B-TC75 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
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Samsung
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Modules
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