Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4R881869E-GCT9 Specialized Hot IC, K4R881869E-GCT9 SAMSUNG
DescriptionSamsung Semiconductor K4R881869E-GCT9 Dram, Memory Density:301.9899 Mbit, Memory Width:18, Organization:16MX18, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:32 ns, Clock Frequency-Max (fCLK):1.066 GHz
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