Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4R571669E-GCN1 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:32 ns, Clock Frequency-Max (fCLK):1.2 GHz
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Samsung
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Modules
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