Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4R441869B-MCK8 Integrated Circuit, SAMSUNG BGA
DescriptionSamsung Semiconductor K4R441869B-MCK8 Dram, Memory Density:150.9949 Mbit, Memory Width:18, Organization:8MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:45 ns, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:16384, Access Mode:BLOCK ORIENTED PROTOCOL
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