Product details
Manufactured bySamsung
Product groupModules
DescriptionK4R441869A Direct RDRAMâ„¢ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh
DescriptionSamsung Semiconductor K4R441869A-NCG6 Dram, Memory Density:150.9949 Mbit, Memory Width:18, Organization:8MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:53.3 ns, Clock Frequency-Max (fCLK):600 MHz, Refresh Cycles:16384, Access Mode:BLOCK ORIENTED PROTOCOL
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Modules
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| # | Name |
|---|---|
| 1 | K4R441869AN-CG6 |