Product details
Manufactured bySamsung
Product groupModules
DescriptionK4R271669B Direct RDRAMâ„¢ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh
DescriptionSamsung Semiconductor K4R271669B-NCG6 Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:53.3 ns, Clock Frequency-Max (fCLK):600 MHz, Refresh Cycles:16384, Access Mode:BLOCK ORIENTED PROTOCOL
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Modules
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