Product details
Manufactured bySamsung
Product groupModules
DescriptionK4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ;
DescriptionSamsung Semiconductor K4R271669A-NCK8 Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:45 ns, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:16384, Access Mode:BLOCK ORIENTED PROTOCOL
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Modules
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| # | Name |
|---|---|
| 1 | K4R271669AN-CK8 |