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K4R271669A-MCG6

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Samsung K4R271669A-MCG6

Samsung K4R271669A-MCG6 overview

K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Samsung Semiconductor K4R271669A-MCG6 Dram, Memory Density:134.2177 Mbit, Memory ...

Manufactured bySamsung
Part number or familyK4R271669A-MCG6
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionK4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ;
DescriptionSamsung Semiconductor K4R271669A-MCG6 Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:53.3 ns, Clock Frequency-Max (fCLK):600 MHz, Refresh Cycles:16384, Access Mode:BLOCK ORIENTED PROTOCOL

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# Name
1 K4R271669AM-CG6