Samsung K4N56163QG-ZC22T overview
Samsung Semiconductor K4N56163QG-ZC22T Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):2 V, Power Supplies:2...
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Part number or familyK4N56163QG-ZC22T
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Manufactured bySamsung
DescriptionSamsung Semiconductor K4N56163QG-ZC22T Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):2 V, Power Supplies:2 V, Access Time-Max:350 ps, Clock Frequency-Max (fCLK):450 MHz, Refresh Cycles:8192
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