Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4N56163QG-GC25 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:400 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:8192
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Samsung
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Modules
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