Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4N51163QG-HC250 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:400 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
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Samsung
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Modules
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