Product details
Manufactured bySamsung
Product groupModules
Description128Mbit GDDR2 SDRAM
DescriptionSamsung Semiconductor K4N26323AE-GC25 Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8, 2.5 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
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Samsung
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Modules
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