Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4N26323AE-GC200 Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Supply Voltage-Nom (Vsup):2.5 V, Access Mode:FOUR BANK PAGE BURST
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request