Product details
Manufactured bySamsung
Product groupModules
Description2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
DescriptionSamsung Semiconductor K4M56323LE-ER1H Dram, Memory Density:268.4355 Mbit, Memory Width:32, Organization:8MX32, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):105 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
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Samsung
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Modules
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