Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4M56163PE-BG1L Integrated Circuit, K4M56163PE-BG1L SAMSUNG
DescriptionSamsung Semiconductor K4M56163PE-BG1L Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):105 MHz, Refresh Cycles:8192
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