Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4M561633G-RN1L Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):3 V, Power Supplies:3/3.3 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):111 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
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Samsung
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Modules
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