Samsung K4M283233H-HN750JR overview
K4M283233H-HN750JR is made by Samsung. Samsung Semiconductor K4M283233H-HN750JR Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Supply Voltage-Nom (Vsup):3 V, Access Time-Max:5.4 ns, Access Mode:FOUR BANK PAGE BURST
Manufactured bySamsung
Part number or familyK4M283233H-HN750JR
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Manufactured bySamsung
DescriptionSamsung Semiconductor K4M283233H-HN750JR Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Supply Voltage-Nom (Vsup):3 V, Access Time-Max:5.4 ns, Access Mode:FOUR BANK PAGE BURST
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