Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4M283233H-FN75T Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Supply Voltage-Nom (Vsup):3 V, Power Supplies:3/3.3 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
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Samsung
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Modules
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