Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4J55323QI-BJ11 Integrated Circuit, SAMSUNG BGA
DescriptionSamsung Semiconductor K4J55323QI-BJ11 Dram, Memory Density:268.4355 Mbit, Memory Width:32, Organization:8MX32, Supply Voltage-Nom (Vsup):1.9 V, Power Supplies:1.9 V, Access Time-Max:220 ps, Clock Frequency-Max (fCLK):900 MHz, Refresh Cycles:4096
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