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K4J55323QF-GC14

Samsung ยท Modules

Samsung K4J55323QF-GC14

Samsung K4J55323QF-GC14 overview

Samsung Semiconductor K4J55323QF-GC14 Dram, Memory Density:268.4355 Mbit, Memory Width:32, Organization:8MX32, Supply Voltage-Nom (Vsup):2 V, Power Supplies:2 V...

Manufactured bySamsung
Part number or familyK4J55323QF-GC14
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4J55323QF-GC14 Dram, Memory Density:268.4355 Mbit, Memory Width:32, Organization:8MX32, Supply Voltage-Nom (Vsup):2 V, Power Supplies:2 V, Access Time-Max:260 ps, Clock Frequency-Max (fCLK):700 MHz, Refresh Cycles:4096

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