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K4J55323QF-GC120

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Samsung K4J55323QF-GC120

Samsung K4J55323QF-GC120 overview

Samsung Semiconductor K4J55323QF-GC120 Dram, Memory Density:268.4355 Mbit, Memory Width:32, Organization:8MX32, Supply Voltage-Nom (Vsup):1.9 V, Access Mode:FOU...

Manufactured bySamsung
Part number or familyK4J55323QF-GC120
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4J55323QF-GC120 Dram, Memory Density:268.4355 Mbit, Memory Width:32, Organization:8MX32, Supply Voltage-Nom (Vsup):1.9 V, Access Mode:FOUR BANK PAGE BURST

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Manufactured by Samsung View Samsung profile
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