Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4J52324QE-BJ110 Dram, Memory Density:536.8709 Mbit, Memory Width:32, Organization:16MX32, Supply Voltage-Nom (Vsup):1.9 V, Power Supplies:1.9 V, Access Time-Max:220 ps, Clock Frequency-Max (fCLK):900 MHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST
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Samsung
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Modules
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