Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4J10324QD-HC14 Integrated Circuit, K4J10324QD-HC14 SAMSUNG
DescriptionSamsung Semiconductor K4J10324QD-HC14 Dram, Memory Density:1.0737 Gbit, Memory Width:32, Organization:32MX32, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:260 ps, Clock Frequency-Max (fCLK):700 MHz, Refresh Cycles:8192
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