Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4H561638J-LCB3T Integrated Circuit
DescriptionSamsung Semiconductor K4H561638J-LCB3T Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:700 ps, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
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