Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4H561638D-TCB0 Integrated Circuit, K4H561638D-TCB0 SAMSUNG
DescriptionSamsung Semiconductor K4H561638D-TCB0 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:750 ps, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
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