Product details
Manufactured bySamsung
Product groupModules
Description256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
DescriptionSamsung Semiconductor K4H560838E-GLB0 Dram, Memory Density:268.4355 Mbit, Memory Width:8, Organization:32MX8, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:750 ps, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request