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K4H560838D-TCCC

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Samsung K4H560838D-TCCC

Samsung K4H560838D-TCCC overview

256Mb D-die DDR400 SDRAM Specification Samsung Semiconductor K4H560838D-TCCC Dram, Memory Density:268.4355 Mbit, Memory Width:8, Organization:32MX8, Supply Volt...

Manufactured bySamsung
Part number or familyK4H560838D-TCCC
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
Description256Mb D-die DDR400 SDRAM Specification
DescriptionSamsung Semiconductor K4H560838D-TCCC Dram, Memory Density:268.4355 Mbit, Memory Width:8, Organization:32MX8, Supply Voltage-Nom (Vsup):2.6 V, Power Supplies:2.6 V, Access Time-Max:650 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST

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