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K4H511638G-HLB30

Samsung ยท Modules

Samsung K4H511638G-HLB30

Samsung K4H511638G-HLB30 overview

Samsung Semiconductor K4H511638G-HLB30 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies...

Manufactured bySamsung
Part number or familyK4H511638G-HLB30
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4H511638G-HLB30 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:700 ps, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:8192

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