Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung K4H511638G-HCB3 Specialized Hot IC, K4H511638G-HCB3 Samsung
DescriptionSamsung Semiconductor K4H511638G-HCB3 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:700 ps, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:8192
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Available from
Sourcing support available
Start a sourcing request