Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4H510638E-TLB0 Dram, Memory Density:536.8709 Mbit, Memory Width:4, Organization:128MX4, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:750 ps, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192
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Samsung
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Modules
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