Product details
Manufactured bySamsung
Product groupModules
DescriptionK4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface
DescriptionSamsung Semiconductor K4H510638C-TCA0 Dram, Memory Density:536.8709 Mbit, Memory Width:4, Organization:128MX4, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:800 ps, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
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Samsung
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Modules
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