Product details
Manufactured bySamsung
Product groupModules
DescriptionK4H280838C 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2
DescriptionSamsung Semiconductor K4H280838C-TCB3 Dram, Memory Density:134.2177 Mbit, Memory Width:8, Organization:16MX8, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:700 ps, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
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Modules
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