Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4G323222A-QC70 Integrated Circuit, Memory
DescriptionSamsung Semiconductor K4G323222A-QC70 Dram, Memory Density:33.5544 Mbit, Memory Width:32, Organization:1MX32, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5.5 ns, Clock Frequency-Max (fCLK):143 MHz, Refresh Cycles:2048, Access Mode:DUAL BANK PAGE BURST
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Samsung
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Modules
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