Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung K4E641612E-TC60 Specialized Hot IC, K4E641612E-TC60 Samsung
DescriptionSamsung Semiconductor K4E641612E-TC60 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:60 ns, Refresh Cycles:4096, Access Mode:FAST PAGE WITH EDO
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