Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4E160812D-BC50 Specialized Hot IC, SAMSUNG TSOJ
DescriptionSamsung Semiconductor K4E160812D-BC50 Dram, Memory Density:16.7772 Mbit, Memory Width:8, Organization:2MX8, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:50 ns, Refresh Cycles:2048, Access Mode:FAST PAGE WITH EDO
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