Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4E151612C-TC50 Specialized Hot IC, K4E151612C-TC50 SAMSUNG
DescriptionSamsung Semiconductor K4E151612C-TC50 Dram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:50 ns, Refresh Cycles:1024, Access Mode:FAST PAGE WITH EDO
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