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K4D55323QF-GC36

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Samsung K4D55323QF-GC36

Samsung K4D55323QF-GC36 overview

Samsung Semiconductor K4D55323QF-GC36 Dram, Memory Density:268.4355 Mbit, Memory Width:32, Organization:8MX32, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1...

Manufactured bySamsung
Part number or familyK4D55323QF-GC36
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4D55323QF-GC36 Dram, Memory Density:268.4355 Mbit, Memory Width:32, Organization:8MX32, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):275 MHz, Refresh Cycles:4096

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