Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4D26323RA-GC36 Specialized Hot IC, K4D26323RA-GC36 SAMSUNG
DescriptionSamsung Semiconductor K4D26323RA-GC36 Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Supply Voltage-Nom (Vsup):2.8 V, Power Supplies:2.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):275 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
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