Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4D26323QG-GC250 Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request