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K4D26323QG-GC25

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Samsung K4D26323QG-GC25

Samsung K4D26323QG-GC25 overview

128mbit Gddr Sdram Samsung Semiconductor K4D26323QG-GC25 Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Supply Voltage-Nom (Vsup):1.8 ...

Manufactured bySamsung
Part number or familyK4D26323QG-GC25
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
Description128mbit Gddr Sdram
DescriptionSamsung Semiconductor K4D26323QG-GC25 Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:4096

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