Product details
Manufactured bySamsung
Product groupModules
Description2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
DescriptionSamsung Semiconductor K4D261638E-TC2A Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):2.8 V, Power Supplies:2.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):350 MHz, Refresh Cycles:4096
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Samsung
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Modules
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