Product details
Manufactured bySamsung
Product groupModules
DescriptionK4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization
DescriptionSamsung Semiconductor K4C89363AF-GCFB Dram, Memory Density:301.9899 Mbit, Memory Width:36, Organization:8MX36, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.5/1.8, 2.5 V, Access Time-Max:500 ps, Clock Frequency-Max (fCLK):300 MHz, Access Mode:FOUR BANK PAGE BURST
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