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K4B510846E-ZCG8

Samsung ยท Modules

Samsung K4B510846E-ZCG8

Samsung K4B510846E-ZCG8 overview

Samsung Semiconductor K4B510846E-ZCG8 Dram, Memory Density:536.8709 Mbit, Memory Width:8, Organization:64MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1....

Manufactured bySamsung
Part number or familyK4B510846E-ZCG8
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B510846E-ZCG8 Dram, Memory Density:536.8709 Mbit, Memory Width:8, Organization:64MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:265 ps, Clock Frequency-Max (fCLK):533 MHz, Refresh Cycles:8192

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