Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B4G0446B-HYH90 Dram, Memory Density:4.295 Gbit, Memory Width:4, Organization:1GX4, Supply Voltage-Nom (Vsup):1.35 V, Power Supplies:1.35 V, Access Time-Max:255 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request