Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B2G1646E-BCNB0 Dram, Memory Density:2.1475 Gbit, Memory Width:16, Organization:128MX16, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:180 ps, Clock Frequency-Max (fCLK):1.066 GHz, Refresh Cycles:8192
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Samsung
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Modules
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